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NTA4001N Small Signal MOSFET
20 V, 238 mA, Single, N-Channel, Gate ESD Protection, SC-75
Features
* * * *
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V(BR)DSS 20 V RDS(on) Typ @ VGS 1.5 W @ 4.5 V 2.2 W @ 2.5 V 3 ID MAX (Note 1) 238 mA
Low Gate Charge for Fast Switching Small 1.6 X 1.6 mm Footprint ESD Protected Gate Pb-Free Package for "Green Manufacturing" Compliance
Applications
* Power Management Load Switch * Level Shift * Portable Applications such as Cell Phones, Media Players,
Digital Cameras, PDA's, Video Games, Hand Held Computers, etc.
1
Maximum Ratings (TJ = 25C unless otherwise stated)
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Power Dissipation (Note 1) Pulsed Drain Current Steady State = 25C Steady State = 25C tP v 10 ms Symbol VDSS VGS ID PD IDM TJ, TSTG ISD TL Value 20 10 238 300 714 -55 to 150 238 260 Unit V V mA mW mA C mA C Top View
3
2 N-Channel
SC-75 (3-Leads)
Gate 1
Operating Junction and Storage Temperature Continuous Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8" from case for 10 s)
3
Drain
Source
2
Thermal Resistance Ratings
Parameter Junction-to-Ambient - Steady State (Note 1) Symbol RqJA Max 416 Unit C/W
MARKING DIAGRAM
3
2 1
1. Surface-mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq. [1 oz] including traces).
SC-75 / SOT-416 CASE 463 Style 5
TF D 1 2
TF = Specific Device Code D = Date Code
ORDERING INFORMATION
Device NTA4001NT1 NTA4001NT1G Package SC-75 SC-75 Pb-Free Shipping 3000 / Tape & Reel 3000 / Tape & Reel
(c) Semiconductor Components Industries, LLC, 2003
1
September, 2003 - Rev. 0
Publication Order Number: NTA4001N/D
NTA4001N
Electrical Characteristics (TJ = 25C unless otherwise specified)
Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Drain-to-Source On Resistance VGS(TH) RDS(on) () VDS = 3 V, ID = 100 mA VGS = 4.5 V, ID = 10 mA VGS = 2.5 V, ID = 10 mA Forward Transconductance CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Diode Characteristics Forward Diode Voltage VSD VGS = 0 V, IS = 10 mA 0.66 0.8 V td(ON) tr td(OFF) tf VGS = 4.5 V, VDS = 5 V, ID = 10 mA, RG = 10 W 13 15 98 60 ns ns CISS COSS CRSS VDS = 5 V, f = 1 MHz, VGS = 0 V 11.5 10 3.5 pF gFS VDS = 3 V, ID = 10 mA 0.5 1.0 1.5 2.2 80 1.5 3.0 3.5 V W mS V(BR)DSS IDSS IGSS VGS = 0 V, ID = 100 mA VGS = 0 V, VDS = 20 V VDS = 0 V, VGS = 10 V 20 1.0 100 V mA mA Symbol Test Condition Min Typ Max Unit
NOTES: 2. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures.
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NTA4001N
0.2 0.18 ID, DRAIN CURRENT (A) 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 0 0.4 0.8 1.2 1.6 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 2 VGS = 1.2 V 0 0.6 TJ = -55C 0.8 1 1.2 1.4 1.6 1.8 VGS, GATE-TO-SOURCE VOLTAGE (V) 2 . VGS = 1.4 V VGS = 2.4 V TJ = 25C VGS = 10 V VGS = 5 V VGS = 2.8 V VGS = 2 V ID, DRAIN CURRENT (A) 0.16 0.2 VDS = 5 V
0.12
0.08 TJ = 125C 0.04 TJ = 25C
Figure 1. On-region Characteristics
Figure 2. Transfer Characteristics
2.5 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) VGS = 4.5 V 2 TJ = 125C
2.5 TJ = 25C VGS = 2.5 V 2
1.5
TJ = 25C
1.5
VGS = 4.5 V
1
TJ = -55C
1
0.5 0 0.05 0.1 0.15 ID, DRAIN CURRENT (A) 0.2
0.5 0 0.05 0.1 0.15 ID, DRAIN CURRENT (A) 0.2
Figure 3. On-resistance versus Drain Current and Temperature
Figure 4. On-resistance versus Drain Current and Gate Voltage
2 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -50 ID = 0.01 A VGS = 4.5 V IDSS, LEAKAGE (nA)
1000 VGS = 0 V
100
TJ = 150C
TJ = 125C 10
1 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) 150
0
5 10 15 VDS, DRAIN-TO-SOURCE VOLTAGE (V)
20
Figure 5. On-resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current versus Voltage
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3
NTA4001N
25 Ciss C, CAPACITANCE (pF) 20 Crss 100 15 Ciss Coss 5 Crss 0 10 VDS = 0 V 5 VGS 0 VDS VGS = 0 V 5 10 15 20 1 1 10 RG, GATE RESISTANCE (W) 100 t, TIME (ns) TJ = 25C 1000 VDD = 5 V ID = 10 mA VGS = 4.5 V td(off) tf tr td(on)
10
10
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V)
Figure 8. Resistive Switching Time Variation versus Gate Resistance
Figure 7. Capacitance Variation
0.1 VGS = 0 V IS, SOURCE CURRENT (A) 0.08 TJ = 25C
0.06
0.04
0.02
0 0.5 0.55 0.6 0.65 0.7 0.75 0.8 VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage versus Current
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NTA4001N
PACKAGE DIMENSIONS
SC-75 / SOT-416 CASE 463-01 ISSUE C
-A- S
2 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. DIM A B C D G H J K L S MILLIMETERS MIN MAX 0.70 0.90 1.40 1.80 0.60 0.90 0.15 0.30 1.00 BSC --- 0.10 0.10 0.25 1.45 1.75 0.10 0.20 0.50 BSC INCHES MIN MAX 0.028 0.035 0.055 0.071 0.024 0.035 0.006 0.012 0.039 BSC --- 0.004 0.004 0.010 0.057 0.069 0.004 0.008 0.020 BSC
G -B-
1
D 3 PL 0.20 (0.008)
M
B K
0.20 (0.008) A
J
C L H
STYLE 5: PIN 1. GATE 2. SOURCE 3. DRAIN
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NTA4001N
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6
NTA4001N/D

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